Low-Dropout Linear Regulator Controller with PGOOD Indication

General Description The RT9024 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme. The part could drive an external N-MOSFET for various applications. The part is operated with VCC power ranging from 3.8V to 13.5V. With such a topology, its with advantages of fl

含状态指示的低压差线性稳压控制器

RT9024 是含有输出状态指示的低压差电压调节控制器，它通过驱动外部 MOSFET 以满足各种不同应用的需要，V_CC 工作电压范围为 3.8V~13.5V。其架构在应用上具有非常大的灵活性，使用成本低廉。其封装为 SOT-23-6。 • 工作电压范围：3.8V~13.5V\n• 具有快速的瞬态响应能力\n• 有使能控制端\n• 符合 RoHS 规范，完全无铅;

Low-Dropout Linear Regulator Controller with PGOOD Indication

General Description The RT9024 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme. The part could drive an external N-MOSFET for various applications. The part is operated with VCC power ranging from 3.8V to 13.5V. With such a topology, its with advantages of fl

Low-Dropout Linear Regulator Controller with PGOOD Indication

General Description The RT9024 is a low-dropout voltage regulator controller with a specific PGOOD indicating scheme. The part could drive an external N-MOSFET for various applications. The part is operated with VCC power ranging from 3.8V to 13.5V. With such a topology, its with advantages of fl

封装/外壳：SOT-23-6 包装：管件 描述：IC LNR REG CTRLR 1OUT SOT23-6 集成电路（IC） 线性稳压器

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A)

Vdss=-60V Rds(on)=0.28Ω Id=-1.6A

P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St

900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

Advanced Power MOSFET

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