The ESD tests are used to classify the electrostatic discharge of microcircuits.

General Description The RT8202/A/B PWM controller provides high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage CPU core, I/O, and chipset RAM supplies in notebook computers. Features ● Ultra-High Effi

The ESD tests are used to classify the electrostatic discharge of microcircuits.

General Description The RT8202/A/B PWM controller provides high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage CPU core, I/O, and chipset RAM supplies in notebook computers. Features ● Ultra-High Effi

The ESD tests are used to classify the electrostatic discharge of microcircuits.

General Description The RT8202/A/B PWM controller provides high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage CPU core, I/O, and chipset RAM supplies in notebook computers. Features ● Ultra-High Effi

同步降压型 DC/DC PWM 控制器

封装/外壳：16-WFQFN 裸露焊盘 功能：降压 包装：管件 描述：IC REG CTRLR BUCK 16WQFN 集成电路（IC） PMIC - 稳压器 - DC DC 开关式控制器

封装/外壳：16-WQFN 裸露焊盘 功能：降压 包装：卷带（TR） 描述：IC REG CTRLR BUCK 16WQFN 集成电路（IC） DC-DC 开关控制器

降压 (Buck) 控制器

降压 (Buck) 控制器

CATV AMPLIFIER MODULE

The RF Line CATV Amplifier Module Description • 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier Features • Specified for 77–, 110– and 128–Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions App

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

500MHz Rail-to-Rail Amplifiers

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Switching Type(Self Oscillation Type with Coil)

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