位置：首页 > IC中文资料第9196页 > RSD080N06TL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Power MOSFET Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | ||
N-Channel 60 V (D-S) MOSFET 文件：1.68923 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
OptiMOS??Power-Transistor Features Low gate charge for fast switching applications 文件：421.18 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
OptiMOS짰 Power-Transistor 文件：446.46 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
OptiMOS??Power-Transistor Features Low gate charge for fast switching applications 文件：421.18 Kbytes Page：10 Pages | Infineon 英飞凌 | |
RSD080N06TL产品属性
- 类型
描述
- 型号
RSD080N06TL
- 功能描述
MOSFET 4V Drive Nch MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CMO |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
AUO |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
G |
23+ |
S |
50000 |
全新原装正品现货,支持订货 |
|||
AUO |
LCD |
50000 |
|||||
ASTEC |
18+ |
SOT353 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
G |
24+ |
S |
5000 |
只做原装公司现货 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CMO |
24+ |
65200 |
|||||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
|||
G |
25+ |
S |
2000 |
原装正品,假一罚十! |
RSD080N06TL芯片相关品牌
RSD080N06TL规格书下载地址
RSD080N06TL参数引脚图相关
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RSD080N06TL数据表相关新闻
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2019-3-7
DdatasheetPDF页码索引
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