Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur