Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET

文件：178.24 Kbytes Page：8 Pages

Power MOSFET

文件：159.78 Kbytes Page：8 Pages

Power MOSFET

文件：178.24 Kbytes Page：8 Pages

Power MOSFET

Power MOSFET

文件：178.24 Kbytes Page：8 Pages

Power MOSFET

文件：159.78 Kbytes Page：8 Pages

Power MOSFET

文件：178.24 Kbytes Page：8 Pages

500V N-CHANNEL MOSFET

„ DESCRIPTION The UTC 11N50is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The U

11A, 500V N-CHANNEL POWER MOSFET

文件：185.39 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：217.08 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：99.59 Kbytes Page：4 Pages

Power MOSFET

文件：159.78 Kbytes Page：8 Pages