PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

PowerMOS transistors Avalanche energy rated

VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistors Avalanche energy rated

500V N-CHANNEL MOSFET

„ DESCRIPTION The UTC 11N50is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The U

11A, 500V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Power MOSFET

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