Silicon N-Channel MOS FET

Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68 (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

Silicon N-Channel MOS FET

Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68 (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

Silicon N-Channel MOS FET

LH0002 Buffer

GENERAL DESCRIPTION The LH0002 is a high speed unity gain buffer designed to provide high current drive capability at frequencies from DC to over 50MHz. It is capable of providing a continuous current of ±100mA and a peak of ±400mA. It is ideal to integrate with an operational amplifier inside a

LH0002 Buffer

GENERAL DESCRIPTION The LH0002 is a high speed unity gain buffer designed to provide high current drive capability at frequencies from DC to over 50MHz. It is capable of providing a continuous current of ±100mA and a peak of ±400mA. It is ideal to integrate with an operational amplifier inside a

LH0002 Buffer

GENERAL DESCRIPTION The LH0002 is a high speed unity gain buffer designed to provide high current drive capability at frequencies from DC to over 50MHz. It is capable of providing a continuous current of ±100mA and a peak of ±400mA. It is ideal to integrate with an operational amplifier inside a

LH0002 Buffer

GENERAL DESCRIPTION The LH0002 is a high speed unity gain buffer designed to provide high current drive capability at frequencies from DC to over 50MHz. It is capable of providing a continuous current of ±100mA and a peak of ±400mA. It is ideal to integrate with an operational amplifier inside a

LH0002 Buffer

GENERAL DESCRIPTION The LH0002 is a high speed unity gain buffer designed to provide high current drive capability at frequencies from DC to over 50MHz. It is capable of providing a continuous current of ±100mA and a peak of ±400mA. It is ideal to integrate with an operational amplifier inside a