Silicon N-Channel MOS FET

Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68 (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET

Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68 (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)

HIGH SPEED, BUFFER AMPLIFIER AMP

DESCRIPTION: The MSK 0002 is a general purpose current amplifier. It is the industry wide replacement for the LH0002. The device is ideal for use with an operational amplifier in a closed loop configuration to increase current output. The MSK 0002 is designed with a symmetrical output stage that

Fibre Optic Cable Assemblies

Features • LSZH rated cables • Zirconium ceramic ferrules • Connectors and cables according to IEC standards • PC, UPC and APC end finish • Pigtails with semi-tight buffer • SC and LC assemblies optimal with OM 3 fiber

Fibre Optic Cable Assemblies

Features • LSZH rated cables • Zirconium ceramic ferrules • Connectors and cables according to IEC standards • PC, UPC and APC end finish • Pigtails with semi-tight buffer • SC and LC assemblies optimal with OM 3 fiber

air flowsensor units

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Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers

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