TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1101~RN1106

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1101~RN1106

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1106\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ;

Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：572.07 Kbytes Page：8 Pages

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever mor

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1106CT\nRoHS Compatible Product(s) (#)：Available Collector Current IC -0.05 A \nCollector-emitter voltage VCEO -20 V ;

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1106MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ;

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V 0.1A SSM 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTO AEC-Q TR PNP Q1BSR=4.7KOHM, 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda