Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2109\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：335.78 Kbytes Page：6 Pages

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：346.36 Kbytes Page：6 Pages

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2109CT\nRoHS Compatible Product(s) (#)：Available Collector Current IC 0.05 A \nCollector-emitter voltage VCEO 20 V ;

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2109MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts req

封装/外壳：SC-75，SOT-416 包装：卷带（TR） 描述：TRANS PREBIAS NPN 50V 0.1A SSM 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTO AEC-Q SINGLE NPN Q1BSR=47K, 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

文件：157.6 Kbytes Page：6 Pages

丝印代码：XJ；Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Photo Interrupter

For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to f

RECTIFIER DIODE

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