N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel VDS = 30V,ID =10A RDS(ON)

N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel VDS = 30V,ID =10A RDS(ON)

N-Channel Enhancement Mode MOSFET

Features Surface-mounted package Advanced trench cell design Super Trench MSL1 BV ≥ 100V Ptot ≤ 500 W ID ≤ 450 A RDS(ON) ≤ 1.25 mΩ @ VGS = 10 V RDS(ON) ≤ 1.85 mΩ @ VGS = 6 V

MOSFET

二极管模块 高耐压二极管 RM450DG-130X

MOSFET

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