HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE APPLICATION Free wheel use, Welder

Three-Phase Diode Bridge

Description: Mitsubishi Three-Phase Diode Bridge Modules are designed for use in applications requiring rectifi cation of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three phase bridge circuit. Each diode is electr

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

0.5A SURFACE MOUNT HIGH VOLTAGE RECTIFIER

Features Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss Built-in Strain Relief Plastic Case Material has UL Flammability Classification Rating 94V-O

千兆路由模块

产品介绍：\n\nRM20是一款高性能千兆以太网模组，采用联发科MT7981B+MT7531A方案，集成双核ARM Cortex-A53处理器，主频高达1.3GHz，具备更强的数据处理能力，可应用于高无线性能、家庭娱乐和家庭自动化等。\n支持openwrt二次开发，可修改、扩展和定制项目，用于开发各种路由网关、交换机和其他网络设备等。开发板上预留的MINI-PCIe接口，可以安装5G模组，插卡后可以实现5G转网口功能。\n产品特点：\n\n-采用方案：MT7981B+MT7531A\n\n-双核ARM®Cortex-A53MPCoreTM\n\n-支持OpenWrt二次开发\n\n-支持5/6 **硬件参数**\n• 存储容量：DDR3 256M(2Gbit); Nand Flash 256M(2Gbit)\n• 工作电压：3.3V\n• 工作电流：平均~700mA@3.3V，供电能力≥3A@3.3V\n• 存储环境：温度：40℃~+85℃，相对湿度：5%~90%R.H.（不凝结）\n• 无线网络类型：STA\n• 网络协议：IPv4，TCP/UDP\n• 用户配置：网页配置;

Thick Film Chip Resistors

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Thick Film Chip Resistors

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Digital Storage Oscilloscopes

Features & Benefits 40 MHz, 60 MHz, and 100 MHz Bandwidths Sample Rates up to 1 GS/s Real Time 2 Channels Monochrome LCD Display Removable Data Storage using the Front-panel USB Port Seamless PC Connectivity through the USB Device Port, with OpenChoice® and NI SignalExpress® PC Software Adv

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

丝印代码：2003；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel VDS = 20V,ID =3A RDS(ON)

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 200A • VRRM Repetitive peak reverse voltage 1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 200A • VRRM Repetitive peak reverse voltage 1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IF 200A ● VRRM 6500V ● High Insulated Type ● 2-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliabi

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE APPLICATION Free wheel use, Welders

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE APPLICATION Free wheel use, Welders

丝印代码：200N120；120V N-Ch Power MOSFET

Feature High Speed Power Smooth Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% IS Tested, 100% Rg Tested Lead Free

丝印代码：200N120；120V N-Ch Power MOSFET

Feature High Speed Power Smooth Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% IS Tested, 100% Rg Tested Lead Free

丝印代码：200N120；120V N-Ch Power MOSFET

Feature High Speed Power Smooth Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% IS Tested, 100% Rg Tested Lead Free

丝印代码：2020；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel Vos = 20V,lp =0.75A Rds(on) 6KV, HBM (Gate-Source Zenner) High power and current handing capab

丝印代码：2020；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel Vds = 20Vjo =0.75A Rds(on)

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE APPLICATION Free wheel use, Welder

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE • IDC DC current 20A • VRRM Repetitive peak reverse voltage 300/600V • trr Reverse recovery time 0.4µs • Insulated Type APPLICATION Free wheel use, Welder

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE APPLICATION Free wheel use, Welder

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE • IDC DC current 20A • VRRM Repetitive peak reverse voltage 300/600V • trr Reverse recovery time 0.4µs • Insulated Type APPLICATION Free wheel use, Welder

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE APPLICATION Free wheel use, Welder

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE • IDC DC current 20A • VRRM Repetitive peak reverse voltage 300/600V • trr Reverse recovery time 0.4µs • Insulated Type APPLICATION Free wheel use, Welder

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE APPLICATION Free wheel use, Welder

Size 16 solid machined contacts for TRIM TRIO connectors

Features and benefits * Made from high conductive copper alloy wih gold or tin over nickel pate finish * Heat reated berylium copper locking springs assure proper locking and alignment of contacts in the housing * Closed entry design on RC socket contact 10 prevent probe damage. * Contacts

Size 16 solid machined contacts for TRIM TRIO connectors

Features and benefits * Made from high conductive copper alloy wih gold or tin over nickel pate finish * Heat reated berylium copper locking springs assure proper locking and alignment of contacts in the housing * Closed entry design on RC socket contact 10 prevent probe damage. * Contacts

丝印代码：20N150；N-Channel Super Trench Power MOSFET

General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested

丝印代码：20N60；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

丝印代码：20N650；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

丝印代码：20N650；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

丝印代码：20N650；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

丝印代码：20P10；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-100V,ID =-20A RDS(ON)

丝印代码：20P30；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -30V,ID = -20A RDS(ON)

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment

Three-Phase Diode Bridge

Description: Mitsubishi Three-Phase Diode Bridge Modules are designed for use in applications requiring rectifi cation of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three phase bridge circuit. Each diode is electr

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE • IO DC output current 40A • VRRM Repetitive peak reverse voltage 1200/1600V • 3 phase bridge • Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power

Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts)

Description: Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectifi cation of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three phase bridge circuit. Each diode is electrica

Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts)

Description: Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectifi cation of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three phase bridge circuit. Each diode is electrica

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE • IO DC output current 40A • VRRM Repetitive peak reverse voltage 1200/1600V • 3 phase bridge • Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power

MEDIUM POWER GENERAL USE INSULATED TYPE

MEDIUM POWER GENERAL USE INSULATED TYPE • IO DC output current 40A • VRRM Repetitive peak reverse voltage 400/800V • 3 phase bridge • Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for con

Three-Phase Diode Bridge Modules (40 Amperes/800 Volts)

Description: Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three-phase bridge circuit. Each diode is electrically in

MEDIUM POWER GENERAL USE INSULATED TYPE

MEDIUM POWER GENERAL USE INSULATED TYPE • IO DC output current 40A • VRRM Repetitive peak reverse voltage 800V • 3 phase bridge • Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control

MEDIUM POWER GENERAL USE INSULATED TYPE

MEDIUM POWER GENERAL USE INSULATED TYPE • IO DC output current 40A • VRRM Repetitive peak reverse voltage 800V • 3 phase bridge • Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control

MEDIUM POWER GENERAL USE INSULATED TYPE

MEDIUM POWER GENERAL USE INSULATED TYPE • IO DC output current 40A • VRRM Repetitive peak reverse voltage 400/800V • 3 phase bridge • Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for con

Size 20 contacts for UT0W connectors

Features and benefits • Made from high conductive copper alloy with gold plate finish. • Two piece construction with dual purpose spring which serves for contact retention and protects the body against damage. • Stamped and formed contacts packaging - On reel: 3000 pcs - In bulk packing: 1

Additional Accessories

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Additional Accessories

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The RM2000 Series is a motor-monitoring device to be used in conjunction with the 777 family of products

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包装：卷带（TR）剪切带（CT） 描述：CRIMP REMOVABLE CONTACTS, RECTAN 连接器，互连器件 背板连接器触头

Digital Storage Oscilloscopes

文件：930.79 Kbytes Page：10 Pages

高压二极管

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：244.31 Kbytes Page：3 Pages

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：265.75 Kbytes Page：3 Pages

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：244.31 Kbytes Page：3 Pages

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：244.31 Kbytes Page：3 Pages

封装/外壳：DO-214AC，SMA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 2KV 500MA DO214 分立半导体产品 二极管 - 整流器 - 单