丝印代码：20N150；N-Channel Super Trench Power MOSFET

General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested

MOSFET

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 1500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Pulse Circuits · High Voltage Power Supplies

150 V, 20 A Common-Cathode Diode

General Description This device has the lowest QRR of any 150 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications  AC/DC and DC/DC output rectification  Output and freewheeling diodes  Motor drive circuits  DC-AC inverters

High Voltage Power MOSFET Extended FBSOA

文件：148.52 Kbytes Page：5 Pages

High Voltage Power MOSFET Extended FBSOA

文件：148.52 Kbytes Page：5 Pages