500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • High Voltage x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested 100% Rg Tested Pb-free lead plating

100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested 100% Rg Tested Pb-free lead plating

100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested, 100% Rg Tested Pb-free lead plating

100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested 100% Rg Tested Pb-free lead plating

N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =180A RDS(ON)

N-Channel Enhancement Mosfet

Feature 30v,180A Rds on

N-Channel Super Trench Power MOSFET

General Features Vds =60V,Ip =180A Rds(on

N-Channel Super Trench Power MOSFET

General Features VDS =60V,ID =180A RDS(ON)

R. F. Molded Chokes

[Ohmite Mfg. Co.]

R. F. Molded Chokes

[Ohmite Mfg. Co.]

N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

P-Channel Enhancement Mode Power MOSFET

General Features Vds =-100VJp =-18A Rds(on)

Size 20 contacts for UT0W connectors

Features and benefits • Made from high conductive copper alloy with gold plate finish. • Two piece construction with dual purpose spring which serves for contact retention and protects the body against damage. • Stamped and formed contacts packaging - On reel: 3000 pcs - In bulk packing: 1

包装：零售封装 描述：Replacement for Yamaha RM1800 Sp

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：244.31 Kbytes Page：3 Pages

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：244.31 Kbytes Page：3 Pages

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

文件：265.75 Kbytes Page：3 Pages

High Voltage Rectifiers

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE GEN PURP 1.8KV 500MA DO214 分立半导体产品 二极管 - 整流器 - 单

Power Modules-Diode Modules High-voltage Diodes RM1800HE-34S

HIGH POWER SWITCHING USE INSULATED TYPE

文件：68.6 Kbytes Page：4 Pages

High Voltage Rectifiers

N-Channel Super Trench Power MOSFET

文件：245.09 Kbytes Page：6 Pages

Updated SIG section with URL to listing

文件：1.88742 Mbytes Page：39 Pages

Updated SIG section with URL to listing

文件：1.88742 Mbytes Page：39 Pages

Multijaw press fittings

文件：3.59104 Mbytes Page：18 Pages

Multijaw press fittings

文件：3.59104 Mbytes Page：18 Pages

Multijaw press fittings

文件：3.59104 Mbytes Page：18 Pages