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RM186

Updated SIG section with URL to listing

文件:1.88742 Mbytes Page:39 Pages

LSTD

莱尔德

RM186

LoRa/Bluetooth Low Energy(BLE) Module

ETC

知名厂家

封装/外壳:24-SMD 模块 包装:卷带(TR) 描述:RX TXRX MOD ISM \u003c 1GHZ U.FL SMD RF/IF,射频/中频和 RFID 射频收发器模块和调制解调器

ETC

知名厂家

Updated SIG section with URL to listing

文件:1.88742 Mbytes Page:39 Pages

LSTD

莱尔德

封装/外壳:24-SMD 模块 包装:袋 描述:RX TXRX MOD ISM \u003c 1GHZ U.FL SMD RF/IF,射频/中频和 RFID 射频收发器模块和调制解调器

ETC

知名厂家

Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier

Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/c

NTE

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

NTE

OPAx186 Precision, Rail-to-Rail Input/Output, 24-V, Zero-Drift Operational Amplifiers

1 Features • High precision: – Offset drift: 0.01 μV/°C – Low offset voltage: 1 μV • Low quiescent current: 90 μA • Excellent dynamic performance: – Gain bandwidth: 750 kHz – Slew rate: 0.35 V/μs • Robust design: – RFI/EMI filtered inputs • Rail-to-rail input/output • Supply range: 4.5

TI

德州仪器

Silicon PIN Photodiode

Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ p ≥ 900 nm). The large active area combined with a flat case gives a high sensitivity at

VISHAYVishay Siliconix

威世威世科技公司

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

更新时间:2026-3-17 16:38:00
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