GLASS PASSIVATED JUNCTION RECTIFIER

VOLTAGE: 50 TO 1000V CURRENT: 1.5A FEATURES • Molded case feature for auto insertion • Glass passivated chip • High current capability • Low leakage current • High surge capability • High temperature soldering guaranteed: 250°C/10sec/0.375(9.5mm)lead length at 5 lbs tension

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound 1.5 ampere operation at TA=55°C with no thermal runaway Glass passiva

1.5 AMP GLASS PASSIVATED RECTIFIERS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction

1.5A GENERAL PURPOSE GPP DIODES

1.5A GENERAL PURPOSE GPP DIODES

CURRENT 1.5 Amperes VOLTAGE 50 to 1000 Volts

Features • The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 • High current capability • Low reverse leakage • Glass passivated junction • Low forward voltage drop • High temperature soldering guaranteed : 350℃ /10 seconds, 0.375(9.5mm) lead length, 5lbs.(2

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

1.5 AMP GLASS PASSIVATED RECTIFIERS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction

1.5 AMP GLASS PASSIVATED RECTIFIERS

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction

Glass Passivated Junction Plastic Rectifier

Features ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes)

文件：23.59 Kbytes Page：2 Pages

Glass Passivated Junction General Purpose Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A

文件：176.24 Kbytes Page：7 Pages

1.5 AMP GLASS PASSIVATED RECTIFIERS

文件：64.739 Kbytes Page：2 Pages

JUNCTION PLASTIC RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High reliability * Low cost * Low leakage * Low forward voltage drop * High current capability * Glass passivated junction

Glass Passivated Junction General Purpose Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A

文件：176.24 Kbytes Page：7 Pages

Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.5 Amperes

文件：157.2 Kbytes Page：2 Pages

GLASS PASSIVATED SILICON RECTIFIER

文件：1.05165 Mbytes Page：2 Pages

GLASS PASSIVATED RECTIFIER

文件：96.71 Kbytes Page：2 Pages

GLASS PASSIVATED RECTIFIER

JUNCTION PLASTIC RECTIFIER

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

文件：40.94 Kbytes Page：2 Pages