SiliconPlanarZenerDiodeforStabilizedPowerSupply

Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mW. •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •LLDPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ●30V,7A,RDS(ON)=30mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. -20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Surface

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE20VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto

OSCILLATOR

OSCILLATOR

PHOTOSCROPTOCOUPLERS

DESCRIPTION TheH11Cseriesconsistsofagallium-arsenideinfraredemittingdiodeopticallycoupledwithalightactivatedsiliconcontrolledrectifierinadual-in-linepackage FEATURES •Highefficiency,lowdegradation,liquidepitaxialLED •UnderwritersLaboratory(UL)recogniz

500mWZenerDiode1.7to37.2Volts

Features •LowLeakage •LowZenerImpedance •HighReliability