Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ● 30V ,7A , RDS(ON)=30mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PHOTO SCR OPTOCOUPLERS

DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package FEATURES • High efficiency, low degradation, liquid epitaxial LED • Underwriters Laboratory (UL) recogniz

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

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