Single Diode Fast Recovery Diode

Features • Fast reverse recovery time: trr = 70 ns typ. (at IF = 5 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

Single Diode Fast Recovery Diode

Features • Fast reverse recovery time: trr = 70 ns typ. (at IF = 5 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

Single Diode Fast Recovery Diode

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：DIODE GEN PURP 600V 5A TO252 分立半导体产品 二极管 - 整流器 - 单

包装：卷带（TR） 描述：DIODE GEN PURP 600V TO220FP 分立半导体产品 二极管 - 整流器 - 单

Single Diode Fast Recovery Diode

文件：86.75 Kbytes Page：4 Pages

Dual Row Pins; 60 Amps

SPECIAL FEATURES  Two bit VID adjustable output voltage  Phase shedding for power saving during light loads  High power density desgin means reduced board space requirement  Power good output signal  Operating ambient temperature up to +70 °C with suitable derating and forced air coo

Power good output signal

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