Ultrafast Recovery Diode

FEATURES ·Ultrafast recovery time ·Low forward voltage ·Low reverse current APPLICATIONS ·Switching power supply ·Power switching circuits

Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = −100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

封装/外壳：TO-220-2 整包 包装：卷带（TR） 描述：DIODE GEN PURP 600V TO220FP 分立半导体产品 二极管 - 整流器 - 单

Diode

封装/外壳：TO-220-2 整包 包装：散装 描述：DIODE GEN PURP 600V 10A TO220FP 分立半导体产品 二极管 - 整流器 - 单

Single Diode Ultra Fast Recovery Diode

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文件：491.5 Kbytes Page：8 Pages

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes Page：8 Pages

Ultra Low Dropout 2A CMOS LDO

文件：491.5 Kbytes Page：8 Pages