位置：首页 > IC中文资料第11721页 > RJK6012DPE-00-J3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJK6012DPE-00-J3 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET High Speed Power Switching 文件：171.37 Kbytes Page：4 Pages | RENESAS 瑞萨 | |
RJK6012DPE-00-J3产品属性
- 类型
描述
- 型号
RJK6012DPE-00-J3
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
更新时间：2026-2-12 20:00:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS(瑞萨)/IDT |
20+ |
- |
3000 |
||||
VBSEMI/微碧半导体 |
24+ |
TO220F |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
VBSEMI |
24+ |
TO220F |
48240 |
||||
RENESAS/瑞萨 |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
24+ |
TO-220F |
16900 |
原装正品现货支持实单 |
|||
VBsemi |
21+ |
TO220F |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
R |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
|||
VBSEMI/微碧半导体 |
24+ |
TO220F |
60000 |
全新原装现货 |
|||
RENESAS |
20+ |
TO-220F |
10 |
进口原装现货,假一赔十 |
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