600V - 5A - MOS FET High Speed Power Switching

Features  Low on-resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard

600V - 5A - MOS FET High Speed Power Switching

Features • Low on-state resistance RDS(on) = 1.4 Ω typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25°C) • High speed switching

Nch Single Power Mosfet 600V 5A 1600Mohm To-220Fpa

Power MOSFETs

600V - 5A - MOS FET High Speed Power Switching

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