isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

600V - 2A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

600V - 2A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Power MOSFETs

600V - 2A - MOS FET High Speed Power Switching

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