Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.465Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Power MOSFETs

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

Silicon N Channel MOS FET High Speed Power Switching

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THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low

Works with low cost MSP430 based LaunchPad platform

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Works with MSP430 Launchpad

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Customer Specification

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Strip amplifier, it makes long LED strip implementation much more conveniently.

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