Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.325Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low

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