Silicon N Channel Power MOS FET High Speed Power Switching Use

Features • VDSS : 500 V • RDS(on) : 1.5 Ω (MAX.) • ID : 5 A • Surface mount package (MP-3A)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Silicon N Channel Power MOS FET High Speed Power Switching Use

Features • VDSS : 500 V • RDS(on) : 1.5 Ω (MAX.) • ID : 5 A • Surface mount package (MP-3A)

Silicon N Channel Power MOS FET High Speed Power Switching Use

Features • VDSS : 500 V • RDS(on) : 1.5 Ω (MAX.) • ID : 5 A • Surface mount package (MP-3A)

Power MOSFETs

Silicon N Channel Power MOS FET High Speed Power Switching Use

文件：97.17 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET High Speed Power Switching Use

文件：97.17 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET High Speed Power Switching Use

文件：97.17 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET High Speed Power Switching Use

文件：97.17 Kbytes Page：7 Pages

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