isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Power MOSFETs

Silicon N Channel MOS FET High Speed Power Switching

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Silicon N Channel MOS FET High Speed Power Switching

文件：92.84 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

文件：92.84 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

文件：92.84 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

文件：81.26 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

文件：92.84 Kbytes Page：7 Pages

Inst, 3 Pr #181c #22 Str BC, PVC Ins E1, OS, Blk PVC Jkt, 300V PLTC ITC CMG

Product Description UL Instrumentation, 3 Pair 18+22AWG (7x26+7x30) Bare Copper, PVC Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES DIR BUR

Quad USB High-Side Power Switch

DESCRIPTION The AIC1529 is a quad high-side power switch for self-powered and bus-powered Universal Serial Bus (USB) applications. Both high-side switches are MOSFET with 110mΩ RDS(ON), which meets USB voltage drop requirements for maximum transmission wire length. FEATURES ● 110mΩ (5V Input) H

3MTM Printable White Rayon Nonwoven Medical Tape

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10 TO 1500 MHz 10 TO 1500 MHz

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DC to 10 Mbd Versatile Link Fiber Optic Analog Transmitter for 1 mm POF and 200 關m PCS

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