isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Power MOSFETs

N-Channel Power MOSFET High-Speed Switching Use

文件：107.28 Kbytes Page：7 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：126.01 Kbytes Page：9 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：107.28 Kbytes Page：7 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：90.47 Kbytes Page：7 Pages

Power MOSFETs

N-Channel Power MOSFET High-Speed Switching Use

文件：90.47 Kbytes Page：7 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：90.47 Kbytes Page：7 Pages

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

Wire Wound

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RF LDMOS Wideband Integrated Power Amplifier

PRI TRANSFORMERS Reinforced Insulation

文件：51.21 Kbytes Page：1 Pages

RF LDMOS Wideband Integrated Power Amplifiers

文件：594.33 Kbytes Page：16 Pages