isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Power MOSFETs

N-Channel Power MOSFET High-Speed Switching Use

文件：107.28 Kbytes Page：7 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：126.01 Kbytes Page：9 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：107.28 Kbytes Page：7 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：90.47 Kbytes Page：7 Pages

Power MOSFETs

N-Channel Power MOSFET High-Speed Switching Use

文件：90.47 Kbytes Page：7 Pages

N-Channel Power MOSFET High-Speed Switching Use

文件：90.47 Kbytes Page：7 Pages

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A)

SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEA TURES l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installation l Plastic package has Underwriter Laboratory

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

uP Compatible, Double-Buffered D to A Converters

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uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages