Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.4 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

Built in SBD N Channel Power MOS FET High Speed Power Switching

文件：127.27 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

文件：88.93 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.4 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

文件：88.93 Kbytes Page：7 Pages

Built in SBD N Channel Power MOS FET High Speed Power Switching

文件：127.27 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

文件：88.93 Kbytes Page：7 Pages

Built in SBD N Channel Power MOS FET High Speed Power Switching

文件：127.27 Kbytes Page：7 Pages

AMC0380D Precision, High-Voltage AC Input, Reinforced Isolated Amplifier With Fixed-Gain Differential Output

1 Features • Integrated, high-voltage resistive divider for direct AC voltage sensing without external resistors • Linear input range and impedance: ±400V, 8.3MΩ • Differential output • Supply voltage range: – High-side (VDD1): 3.0V to 5.5V – Low-side (VDD2): 3.0V to 5.5V • Low DC errors:

Rundsteckverbinder mit Schraubverschluss nach IEC 60130-9, IP 40/IP 68

文件：74.38 Kbytes Page：1 Pages

Accessories-Locking plugs-Accessoires-Connecteurs circulaires

文件：784.82 Kbytes Page：2 Pages

Circular connectors with threaded joint M16 acc. to IEC 61076-2-106, IP40/IP67/IP68

文件：488.6 Kbytes Page：3 Pages

CAPTIVE PANEL SCREW STYLE 2

文件：83 Kbytes Page：1 Pages