Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free Applications DC-DC conversion for PC and Server.

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

DC-AC INVERTER UNIT 5.0W DUAL OUTPUTS WITH DIMMING FUNCTION

DESCRIPTION : This DC to AC Inverter was developed for large size LCD panel as Multiple Media, Replacement of CRT Monitor and other general Purpose. FEATURES : • Current Feedback Circuit • High Efficiency • Low noise with voltage resonant circuit • Regulated output current •

Dual N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology Low Gate Charge 100 EAS Guaranteed Green Device Available Application Portable Equipment. Battery Powered Systems. Hard Switching and High-Speed Circuit.

Low-Loss 70MHz IF SAW Filter (BW=16 MHz)

Maximum Rating: 1. Input Power Level: +20 dBm 2. Operating Temperature: -10°C to +70°C 3. Storage Temperature: -40°C to +85°C

20V(D-S) N-Channel Enhancement Mode Power MOS FET

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