Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

Silicon N channel IGBT, 360V, 30A

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High-Speed Image Filter with Coefficient RAM

DESCRIPTION The LF3347 consists of an array of four 12 x 12-bit registered multipliers followed by two summers and a 32-bit accumulator. The LF3347 provides four 256 x 12-bit coefficient banks which are capable of storing 256 different sets of filter coefficients for the multiplier array. All mul

50 WATT ZENER TRANSIENT SUPRESSORS 3.9 TO 2OOVOLTS

50 WATT ZENER TRANSIENT SUPRESSORS 3.9 TO 2OO VOLTS

Lockit™ Cable Holders - Arrowhead Mount

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WASHERS

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NetShelter SX 48U 750mm Wide x 1200mm Deep Networking Enclosure with Sides Black

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