位置：首页 > IC中文资料第5560页 > RJH30H1DPP-M0
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJH30H1DPP-M0 | Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ. | RENESAS 瑞萨 |   | |
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL | RENESAS 瑞萨 | |
RJH30H1DPP-M0产品属性
- 类型
描述
- 型号
RJH30H1DPP-M0
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
T0-3P |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS |
2511 |
TO-220F |
350 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
瑞萨 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/HITACHI |
2223+ |
TO-263-ORIG |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RJH |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
|||
RENESAS |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
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DdatasheetPDF页码索引
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