负可调稳压器

RH137 负可调稳压器在 –1.2V 至 –22V 的输出电压范围内将提供高达 1.5A 的输出电流。\n\n 我们已尽一切努力使该器件简单易用且不易损坏。内部电流和功率限制结合真正的热限制可避免器件因过载或短路而损坏，即使当稳压器未固定在散热器上的时候也不例外。\n\n 利用 ADI 公司先进的加工方法，并结合热限制模式中的 100% 老化试验，实现了较高的可靠性。这确保所有的器件保护电路均处于正常工作状态，并消除了采用其他仅接受标准电气测试之稳压器时会遇到的现场故障。\n\n 晶圆批次采用 ADI 内部开发、适合严苛军事应用的 Class S 流程至 绝对最大额定值\n• 功耗：内部受限\n\n• 输入输出电压差：30V\n\n• 操作交叉口\n• 温度范围：-55°C至150°C;

Negative Adjustable Regulator

文件：163.18 Kbytes Page：4 Pages

Quad Precision Operational Amplifier

文件：196.02 Kbytes Page：8 Pages

Negative Adjustable Regulator

文件：93.46 Kbytes Page：2 Pages

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the