2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed

2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N?묬hannel DPAK

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a hig

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive f

SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N?묬hannel DPAK

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a hig

SMARTDISCRETES TM MOSFET 2 Amps, 62 Volts, Logic Level N?묬hannel TO??20

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VOLTAGE CLAMPED CURRENT LIMITING MOSFET

文件：192.37 Kbytes Page：6 Pages