2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed

2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive f

DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

TMOS V SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as w

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

TMOS V™ SO-8 for Surface Mount N-Channel Enhancement-mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

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