DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

TMOS V SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as w

DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

TMOS V™ SO-8 for Surface Mount N-Channel Enhancement-mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive f

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

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