DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

TMOS V SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as w

DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

TMOS V™ SO-8 for Surface Mount N-Channel Enhancement-mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM

SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N?묬hannel DPAK

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a hig

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive f

SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N?묬hannel DPAK

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a hig

SMARTDISCRETES TM MOSFET 2 Amps, 62 Volts, Logic Level N?묬hannel TO??20

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VOLTAGE CLAMPED CURRENT LIMITING MOSFET

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