-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]