位置:首页 > IC中文资料第1944页 > RFP60P03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | INTERSIL | ||
RFP60P03 | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” | FAIRCHILD 仙童半导体 | ||
RFP60P03 | isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -60A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | INTERSIL | |||
60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” | FAIRCHILD 仙童半导体 | |||
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery | STMICROELECTRONICS 意法半导体 | |||
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery | STMICROELECTRONICS 意法半导体 |
RFP60P03产品属性
- 类型
描述
- 型号
RFP60P03
- 功能描述
MOSFET TO-220
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2026+ |
TO220. |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
24+ |
TO220 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
||||
INTERSIL |
23+ |
65480 |
|||||
ACRIAN |
23+ |
TO-63 |
155 |
专营高频管模块,全新原装! |
|||
HARRIS CORPORATION |
25+ |
26 |
公司优势库存 热卖中! |
||||
ACRIAN |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
RF-POWER |
SMD |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Intersil |
24+ |
8866 |
|||||
FAIRCHILD/仙童 |
20+ |
TO-220 |
41 |
现货很近!原厂很远!只做原装 |
|||
FAIRCHILD/仙童 |
25+ |
TO-220 |
20300 |
FAIRCHILD/仙童原装特价RFP60P03即刻询购立享优惠#长期有货 |
RFP60P03规格书下载地址
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