60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

P-ChannelEnhancementModePowerMOSFET

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P-ChannelEnhancementModePowerMOSFET

文件：896.46 Kbytes Page：5 Pages

-30VP-ChannelEnhancementModeMOSFET

文件：1.59007 Mbytes Page：5 Pages