4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. These

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel 650 V (D-S) MOSFET

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PHOTO SCR OPTOCOUPLERS

DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • 10 A, T2L compatible, solid state relay • 25 W logic indicator lamp driver • 400 V symmetrical transistor c

Optically Coupled SCR Isolators

Photo SCR Single Channel Dip, Photo SCR

Fast Switching

FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.1Ω(Max) ·Fast Switching APPLICATIONS ·Switch mode power supply.

Photo SCR

Photo SCR Single Channel Dip, Photo SCR

PHOTO SCR OPTOCOUPLERS

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