4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. These

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

N-Channel 650 V (D-S) MOSFET

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STANDARD THRU HOLE CASE 730A-04

The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100 Minimum @ Specified Conditions • Guaranteed Switching Speeds • Meets or Exceeds all JEDEC Registered Specifica

Optocoupler, Phototransistor Output, With Base Connection

DESCRIPTION Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. FEATURES • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance

Optocoupler with Phototransistor Output

Description The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and

PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)

AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon p

Optocoupler with Phototransistor Output

Description The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and