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型号 功能描述 生产厂家 企业 LOGO 操作
RFP4N06

4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

INTERSIL

RFP4N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate

INTERSIL

Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

INTERSIL

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

FAIRCHILD

仙童半导体

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

INTERSIL

RFP4N06产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    25000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±10V

  • Maximum Drain Source Voltage:

    60V

  • Maximum Continuous Drain Current:

    4A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-8-3 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
TO-220
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
25+
TO-220
20948
样件支持,可原厂排单订货!
F
24+
TO-220A
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
FAIRCHILD/仙童
20+PB
TO-220
90000
20+PB
INTESIL
25+
TO-220
8000
专做原装正品,假一罚百!
INTERSIL/FSC
26+
TO-220
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
FAIRCHILD
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VBsemi
25+
TO220
18000
原装正品 有挂有货 假一赔十
VBSEMI
16+
TO220
10115
全新 发货1-2天
INTERSIL
17+
TO-220
6200

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