| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP4N06 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | INTERSIL | ||
RFP4N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate | INTERSIL | |||
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220AB | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished | INTERSIL | |||
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished | FAIRCHILD 仙童半导体 | |||
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished | INTERSIL |
RFP4N06产品属性
- 类型
描述
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
25000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±10V
- Maximum Drain Source Voltage:
60V
- Maximum Continuous Drain Current:
4A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-220 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
TO-220 |
20948 |
样件支持,可原厂排单订货! |
|||
F |
24+ |
TO-220A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
FAIRCHILD/仙童 |
20+PB |
TO-220 |
90000 |
20+PB |
|||
INTESIL |
25+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
INTERSIL/FSC |
26+ |
TO-220 |
28610 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FAIRCHILD |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VBsemi |
25+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
VBSEMI |
16+ |
TO220 |
10115 |
全新 发货1-2天 |
|||
INTERSIL |
17+ |
TO-220 |
6200 |
RFP4N06芯片相关品牌
RFP4N06规格书下载地址
RFP4N06参数引脚图相关
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- rtl8100c
- rs触发器
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- rf开关
- RFPO40
- RFP-DL2
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- RFP6P08
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- RFP6N45
- RFP5P15
- RFP5P12
- RFP50N06R4034
- RFP50N06LE
- RFP50N06_Q
- RFP50N06_NL
- RFP50N06_F102
- RFP50N06
- RFP50N05L_Q
- RFP50N05L_04
- RFP50N05L
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- RFP-50-50SMA-B
- RFP-50-50RCG-S
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- RFP-500-50N-D
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- RFP45N06_Q
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- RFP2N12
- RFP2N10
- RFP2N08
- RFP150N
- RFN6T2D
- RFN5B6S
- RFN5B2S
- RFN55X
- RFN55S
- RFN55L
- RFN55C2
- RFN55C1
RFP4N06数据表相关新闻
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深圳市大唐盛世半导体有限公司 手 机:17727572380 。 电 话:0755-83226739 Q Q:626839837。 微信号:15096137729
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DdatasheetPDF页码索引
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