型号 功能描述 生产厂家&企业 LOGO 操作
RFD4N06L

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

Intersil
RFD4N06L

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

Intersil

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@3.0A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@3A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET

文件:380.9 Kbytes Page:8 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

RFD4N06L产品属性

  • 类型

    描述

  • 型号

    RFD4N06L

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-6-16 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
20+PB
TO-252
90000
20+PB
F
22+
SOT-252
25000
只做原装进口现货,专注配单
infineon
23+
原厂原装
3000
全新原装
HARRIS
23+
NA
1410
专做原装正品,假一罚百!
FAIRCHILD/仙童
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
HARRIS
25+23+
TO252
73068
绝对原装正品现货,全新深圳原装进口现货
INTERSIL
24+
5000
只做原厂渠道 可追溯货源
FSC/ON
23+
原包装原封 □□
67132
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
HARRIS
9909+
TO-252
1275
一级代理,专注军工、汽车、医疗、工业、新能源、电力
onsemi(安森美)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。

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