4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate

Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220AB

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@3.0A

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@3A

60V N-Channel Enhancement Mode MOSFET

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