2A, 200V, 3.500 Ohm, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET

The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

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N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE

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POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE

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