isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE

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POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 200V RDSON (MAX.) 120mΩ ID 18A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

Drain Current ID= 2A@ TC=25C

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Power MOSFET

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200V N-Channel Enhancement Mode MOSFET

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