12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETsThe RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors\ndesigned for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar s • 12A, 80V and 100V\n• rDS(ON)= 0.300Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount\n  Components to PC Boards”;

Trans MOSFET P-CH 80V 12A 3-Pin(3+Tab) TO-220AB

Power Field Effect Transistor

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Power Field Effect Transistor

文件：95.67 Kbytes Page：2 Pages

Power Field Effect Transistor

文件：95.67 Kbytes Page：2 Pages

P-CHANNEL ENHANCEMENT-MODE

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