isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power Field Effect Transistor

文件：95.67 Kbytes Page：2 Pages

Power Field Effect Transistor

文件：95.67 Kbytes Page：2 Pages

P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power

Power Field Effect Transistor

文件：95.67 Kbytes Page：2 Pages

Power Field Effect Transistor

文件：95.67 Kbytes Page：2 Pages

P-CHANNEL ENHANCEMENT-MODE

文件：676.83 Kbytes Page：12 Pages