RF31价格

参考价格:¥238.0841

型号:RF310-12 品牌:Teledyne 备注:这里有RF31多少钱,2025年最近7天走势,今日出价,今日竞价,RF31批发/采购报价,RF31行情走势销售排行榜,RF31报价。
型号 功能描述 生产厂家 企业 LOGO 操作

3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode

RFMD

威讯联合

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V

RFMD

威讯联合

3V 1700MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V

RFMD

威讯联合

3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3105 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

RFMD

威讯联合

TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u

RFMD

威讯联合

TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u

RFMD

威讯联合

TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3110 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes

RFMD

威讯联合

TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3110 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes

RFMD

威讯联合

3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3

RFMD

威讯联合

3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3

RFMD

威讯联合

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

RFMD

威讯联合

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

RFMD

威讯联合

Temperature Data Logger

Features • Measurement range -4°F to +140°F • Rechargeable internal lithium polymer battery • Easy data logger set-up using PC software application or the Comark Cloud App • Temperature data logger with WiFi capability and integrated display • Transmits data via your local WiFi network • Tem

COMARK

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

3V 1800MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

RFMD

威讯联合

3V 1800MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

RFMD

威讯联合

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT

DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth

TELEDYNE

华特力科

QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes,

rfm

QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE

Product Description The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes,

rfm

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes,

RFMD

威讯联合

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes,

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and h

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and h

RFMD

威讯联合

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

RFMD

威讯联合

DUAL-BAND GSM900/DCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

RFMD

威讯联合

DUAL-BAND GSM900/DCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

RFMD

威讯联合

DUAL-BAND GSM900/DCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

RFMD

威讯联合

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

RFMD

威讯联合

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process,

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE

Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process,

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh

RFMD

威讯联合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh

RFMD

威讯联合

DUAL-BAND GSM/DCS POWER AMP MODULE

Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th

RFMD

威讯联合

DUAL-BAND GSM/DCS POWER AMP MODULE

Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th

RFMD

威讯联合

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50Ω input and output terminals. The device is designed for use as the final RF ampl

RFMD

威讯联合

QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE

Product Description The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50Ω input and output terminals. The device is designed for use as the final RF ampl

RFMD

威讯联合

RF31产品属性

  • 类型

    描述

  • 型号

    RF31

  • 制造商

    RFMD

  • 制造商全称

    RF Micro Devices

  • 功能描述

    3V 900MHZ LINEAR AMPLIFIER MODULE

更新时间:2025-10-23 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RFMD
24+
NA/
3266
原厂直销,现货供应,账期支持!
Littelfuse(美国力特)
24+
SMD
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RFMD
24+
QFN
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RFMD/威讯
24+
NA
990000
明嘉莱只做原装正品现货
TELEDYNE
专业铁帽
CAN
67500
铁帽原装主营-可开原型号增税票
TELEDYNE
23+
N/A
7560
原厂原装
RFMD
25+23+
QFN
38341
绝对原装正品全新进口深圳现货
QUALCOMM
22+
QFN
3000
原装正品,支持实单
RFMD
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
Littelfuse
21+
2000
全新原装鄙视假货

RF31数据表相关新闻