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RF31价格
参考价格:¥238.0841
型号:RF310-12 品牌:Teledyne 备注:这里有RF31多少钱,2025年最近7天走势,今日出价,今日竞价,RF31批发/采购报价,RF31行情走势销售排行榜,RF31报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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3V 900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode | RFMD 威讯联合 | |||
3V 1900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V | RFMD 威讯联合 | |||
3V 1700MHZ LINEAR AMPLIFIER MODULE Product Description The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V | RFMD 威讯联合 | |||
3V 900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3105 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD | RFMD 威讯联合 | |||
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u | RFMD 威讯联合 | |||
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for u | RFMD 威讯联合 | |||
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Product Description The RF3110 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes | RFMD 威讯联合 | |||
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Product Description The RF3110 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes | RFMD 威讯联合 | |||
3V 900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3 | RFMD 威讯联合 | |||
3V 900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3 | RFMD 威讯联合 | |||
3V 1900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD | RFMD 威讯联合 | |||
3V 1900MHZ LINEAR AMPLIFIER MODULE Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD | RFMD 威讯联合 | |||
Temperature Data Logger Features • Measurement range -4°F to +140°F • Rechargeable internal lithium polymer battery • Easy data logger set-up using PC software application or the Comark Cloud App • Temperature data logger with WiFi capability and integrated display • Transmits data via your local WiFi network • Tem | COMARK | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
3V 1800MHZ LINEAR AMPLIFIER MODULE Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD | RFMD 威讯联合 | |||
3V 1800MHZ LINEAR AMPLIFIER MODULE Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD | RFMD 威讯联合 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
HIGH REPEATABILITY,DC-8 GHz/20Gbps TO-5 RELAYS, DPDT DESCRIPTION The ultra miniature RF312 is designed to improve upon the RF300 relay’s high frequency performance. The RF312 offers monotonic insertion loss to 8 GHz. This improvement in RF insertion loss over the frequency range, makes these relays highly suitable for use in attenuator and oth | TELEDYNE 华特力科 | |||
QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE Product Description The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, | rfm | |||
QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE Product Description The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, | rfm | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, | RFMD 威讯联合 | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and h | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and h | RFMD 威讯联合 | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f | RFMD 威讯联合 | |||
DUAL-BAND GSM900/DCS POWER AMP MODULE Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f | RFMD 威讯联合 | |||
DUAL-BAND GSM900/DCS POWER AMP MODULE Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f | RFMD 威讯联合 | |||
DUAL-BAND GSM900/DCS POWER AMP MODULE Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f | RFMD 威讯联合 | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f | RFMD 威讯联合 | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need f | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh | RFMD 威讯联合 | |||
DUAL-BAND GSM/DCS POWER AMP MODULE Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th | RFMD 威讯联合 | |||
DUAL-BAND GSM/DCS POWER AMP MODULE Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as th | RFMD 威讯联合 | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50Ω input and output terminals. The device is designed for use as the final RF ampl | RFMD 威讯联合 | |||
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Product Description The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50Ω input and output terminals. The device is designed for use as the final RF ampl | RFMD 威讯联合 |
RF31产品属性
- 类型
描述
- 型号
RF31
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
3V 900MHZ LINEAR AMPLIFIER MODULE
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RFMD |
24+ |
NA/ |
3266 |
原厂直销,现货供应,账期支持! |
|||
Littelfuse(美国力特) |
24+ |
SMD |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RFMD |
24+ |
QFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RFMD/威讯 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
TELEDYNE |
专业铁帽 |
CAN |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
TELEDYNE |
23+ |
N/A |
7560 |
原厂原装 |
|||
RFMD |
25+23+ |
QFN |
38341 |
绝对原装正品全新进口深圳现货 |
|||
QUALCOMM |
22+ |
QFN |
3000 |
原装正品,支持实单 |
|||
RFMD |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Littelfuse |
21+ |
2000 |
全新原装鄙视假货 |
RF31芯片相关品牌
RF31规格书下载地址
RF31参数引脚图相关
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- ricoh
- rf开关
- rfid技术
- rfid
- RF3225-000
- RF3211-000
- RF3202-000
- RF320-12
- RF3191-000
- RF3181D
- RF3176-000
- RF3175-000
- RF3171D
- RF3165
- RF3164
- RF3163
- RF3161-000
- RF3161
- RF3160
- RF3159
- RF3158
- RF3146D
- RF3146
- RF3145
- RF3140
- RF313Z-5
- RF313-5
- RF3133
- RF312-5
- RF312-12/G
- RF3120
- RF3118
- RF3117
- RF311-5/G
- RF311-26/G
- RF311-12/G
- RF3110
- RF3108
- RF310-5
- RF3105
- RF310-12
- RF-310
- RF-31
- RF30A3SP
- RF30A3S
- RF30A3B
- RF30A2B
- RF30A1SP
- RF30A1S
- RF30A1B
- RF3080-000
- RF3076-000
- RF3060-000
- RF305B6STL
- RF3043
- RF3042
- RF3041-000
- RF3040-000
- RF303Z-5
- RF303Y-5/S
- RF303Y-5
- RF303XY-5
- RF3039-000
- RF3038-000
- RF3037-000
- RF3037
- RF3036
- RF303-5
- RF3035
- RF3034
- RF3033
- RF3031
- RF3030
- RF303
- RF3029
- RF3028
- RF3027
- RF3026
- RF3025
- RF3024
- RF3023
- RF3021
- RF3020
RF31数据表相关新闻
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RF6L025BG功率MOSFET具有60V漏源电压(VDSS)和±2.5A连续漏极电流(ID)
2024-4-12RF37S114HTFJB
RF37S114HTFJB
2023-3-24RF430F5144CIRKVRQ1原装现货
联系人张生 电话19926428992 QQ1924037095
2021-8-25REX-C700
REX-C700,全新原装当天发货或门市自取0755-82732291.
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REX-C400,全新原装当天发货或门市自取0755-82732291.
2020-4-19RF201LAM4STFTR授权一级代理进口原装现货放心采购
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2019-5-11
DdatasheetPDF页码索引
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