位置:首页 > IC中文资料第5485页 > RF3145
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF3145 | QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and h | RFMD 威讯联合 | ||
RF3145 | QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE 文件:310.32 Kbytes Page:18 Pages | RFMD 威讯联合 | ||
RF3145 | QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE | QORVO 威讯联合 | ||
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and h | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE 文件:310.32 Kbytes Page:18 Pages | RFMD 威讯联合 | |||
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE 文件:310.32 Kbytes Page:18 Pages | RFMD 威讯联合 | |||
N-Channel Depletion-Mode Vertical DMOS FETs General Description The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with | SUTEX | |||
30 AMP SCHOTTKY BARRIER RECTIFIER 30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts | MICROSEMI 美高森美 | |||
CMOS System Reset Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD | MITSUMI 三美 | |||
1.6GHz NPN TRANSISTOR ARRAYS 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The transistors exhibit typical fTS of 1.6GHz and wideband noise figures of 3.0dB The dev | ZARLINK Zarlink Semiconductor Inc | |||
1.6GHz NPN TRANSISTOR ARRAYS 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The transistors exhibit typical fTS of 1.6GHz and wideband noise figures of 3.0dB The dev | ZARLINK Zarlink Semiconductor Inc |
RF3145产品属性
- 类型
描述
- 型号
RF3145
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD |
24+ |
QFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RFMICRO |
25+23+ |
New |
36562 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RFMD |
22+ |
module |
3000 |
原装正品,支持实单 |
|||
24+ |
LCC |
290 |
|||||
RFMICRO |
1701+ |
? |
6500 |
只做原装进口,假一罚十 |
|||
RFMD |
2447 |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RFMD |
22+ |
QFN |
20000 |
公司只做原装 品质保障 |
|||
RF |
2450+ |
BGA |
6540 |
只做原装正品现货!或订货假一赔十! |
|||
RFMD |
04+ |
QFN |
2683 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RFMD |
0613+ |
LGA |
116 |
原装现货海量库存欢迎咨询 |
RF3145规格书下载地址
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RF3145数据表相关新闻
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2019-5-11
DdatasheetPDF页码索引
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