HIGH ISOLATION BUFFER AMPLIFIER

Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to high

HIGH ISOLATION BUFFER AMPLIFIER

Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to high

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2308 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2308 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

WIDEBAND GENERAL PURPOSE AMPLIFIER

Product Description The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF

WIDEBAND GENERAL PURPOSE AMPLIFIER

Product Description The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF

GENERAL PURPOSE AMPLIFIER

Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF

GENERAL PURPOSE AMPLIFIER

Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of

GENERAL PURPOSE LOW NOISE AMPLIFIER

Product Description The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with low current consumption. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Feedback with capacitive compens

GENERAL PURPOSE LOW NOISE AMPLIFIER

Product Description The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with low current consumption. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Feedback with capacitive compens

LINEAR CATV AMPLIFIER

Product Description The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of bett

LINEAR CATV AMPLIFIER

Product Description The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of bett

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2320 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. It has been designed for use as an easily cascadable 75Ω gain block with a noise figure of less t

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2320 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. It has been designed for use as an easily cascadable 75Ω gain block with a noise figure of less t

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2321 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2321 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2322 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2322 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2323 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2323 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage

PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER

Product Description The RF2324 is a low noise CDMA/TDMA PA driver amplifier with a very high dynamic range designed for transmit digital PCS applications at 1880MHz. The device functions as an outstanding PA driver amplifier in the transmit chain of digital subscriber units where low transmit noi

PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER

Product Description The RF2324 is a low noise CDMA/TDMA PA driver amplifier with a very high dynamic range designed for transmit digital PCS applications at 1880MHz. The device functions as an outstanding PA driver amplifier in the transmit chain of digital subscriber units where low transmit noi

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50Ω.

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50Ω.

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2326 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50Ω.

3V GENERAL PURPOSE AMPLIFIER

Product Description The RF2326 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50Ω.

Radios, RF Modem, Base Station Package

Features: • Meets NTIA narrowband and FCC re-farming requirements for transmission • Allows programming of the radio to your FCC-assigned frequency using optional software. Contact CSI for details • Compatible with our CR510, CR10(X), 21X, CR23X, and CR7 dataloggers • Backward compatible with

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2334 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2334 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2336 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2336 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2337 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2337 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2338 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2338 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

3V LOW NOISE AMPLIFIER/3V PA DRIVER AMPLIFIER

Product Description The RF2347 is a low noise amplifier with a very high dynamic range designed for digital cellular applications at 900MHz. The device functions as an outstanding front end low noise amplifier or power amplifier driver amplifier in the transmit chain of digital subscriber units w

3V LOW NOISE AMPLIFIER/3V PA DRIVER AMPLIFIER

Product Description The RF2347 is a low noise amplifier with a very high dynamic range designed for digital cellular applications at 900MHz. The device functions as an outstanding front end low noise amplifier or power amplifier driver amplifier in the transmit chain of digital subscriber units w

3V CDMA DRIVER AMPLIFIER

Product Description The RF2352 is a low noise driver amplifier for 900MHz CDMA/AMPS applications. The device is designed for operation from 2.7V to 3.6V, and features selectable high and low gain modes. In high gain mode, the device will provide about 19dB of gain, and the linearity and current d

3V CDMA DRIVER AMPLIFIER

Product Description The RF2352 is a low noise driver amplifier for 900MHz CDMA/AMPS applications. The device is designed for operation from 2.7V to 3.6V, and features selectable high and low gain modes. In high gain mode, the device will provide about 19dB of gain, and the linearity and current d

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2360 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. It has been designed for use as an easily cascadable 75Ωgain block with a Noise Figure of less than

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2360 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. It has been designed for use as an easily cascadable 75Ωgain block with a Noise Figure of less than

LINEAR GENERAL PURPOSE AMPLIFIER

Product Description The RF2360 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. It has been designed for use as an easily cascadable 75Ωgain block with a Noise Figure of less than